| PART |
Description |
Maker |
| LHF00L08 |
Flash Memory 32M (2MB x 16)
|
Sharp Microelectronics
|
| LHF00L12 |
Flash Memory 32M (2MB x 16)
|
Sharp Microelectronics
|
| LHF00L13 |
Flash Memory 32M (2MB x 16)
|
Sharp Microelectronics
|
| M29W160EB70N1 M29W160EB70N1T M29W160EB70N6 M29W160 |
16-Bit Edge-Triggered D-Type Flip-Flop With 3-State Outputs 56-BGA MICROSTAR JUNIOR -40 to 85 16兆位（含2Mb x8兆x16插槽，引导块3V电源快闪记忆
CAP 3300UF 6.3V ELECT FC RADIAL 16兆位（含2Mb x8兆x16插槽，引导块V电源快闪记忆
16 Mbit (2Mb x8 or 1Mb x16 / Boot Block) 3V Supply Flash Memory
16 MBIT (2MB X8 OR 1MB X16, BOOT BLOCK) 3V SUPPLY FLASH MEMORY
70ns; V(in/out): -0.6 to 0.6V; 16Mbit (2Mb x 8 or 1Mb x 16, boot block) 3V supply flash memory
|
STMicroelectronics N.V.
ST Microelectronics
SGS Thomson Microelectronics
|
| LHF16KA6 LH28F160S3T-L10 LH28F160S3T-L10A |
Flash Memory 16M (2MB 8/1MB 16) 闪存16M内存MB的/1MB6
Flash Memory 16M (2MB bb 8/1MB bb 16)
Flash Memory 16M (2MB × 8/1MB × 16)
|
Sharp, Corp.
Sharp Corporation
Sharp Electrionic Components
|
| K9F5608Q0C K9F5608Q0C-D K9F5608Q0C-DCB0 K9F5608Q0C |
32M x 8 Bit NAND Flash Memory
32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
512Mb/256Mb 1.8V NAND Flash Errata
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| M28W320ECB85N6E M28W320ECT10N6E M28W320ECT70N6E M2 |
32 Mbit (2Mb x16/ Boot Block) 3V Supply Flash Memory
32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory 32兆位（处理器x16插槽，引导块V电源快闪记忆
|
ST Microelectronics
STMicroelectronics N.V.
|
| ID240D01 |
2MB Flash Memory Card
|
SHARP[Sharp Electrionic Components]
|
| LH28F160S3HT-L10A LHF16KA7 |
Flash Memory 16M (2MB x 8/1MB x 16)
Flash Memory 16M (2MB bb 8/1MB bb 16)
|
SHARP
|
| LH28F160S5HT-L70 LHF16KA3 |
Flash Memory 16M (2MB bb 8/1MB bb 16)
Flash Memory 16M (2MB x 8/1MB x 16)
Flash Memory 16M (2MB 8/1MB 16)
Flash Memory 16M (2MB 】 8/1MB 】 16)
|
SHARP[Sharp Electrionic Components]
|
